| PART |
Description |
Maker |
| CMLM0205 |
MULTI DISCRETE MODULESURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE 280 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Central Semiconductor, Corp.
|
| SSM6E03TU |
Multi-chip discrete device (P-ch N-ch)
|
TOSHIBA
|
| HN2E05J |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
Toshiba Corporation
Toshiba Semiconductor
|
| HN2E04F |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
Toshiba Corporation
Toshiba Semiconductor
|
| CMLM3405 |
MULTI DISCRETE MODULE?/a> SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE⑩ SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE??SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| CMLM7405 |
MULTI DISCRETE MODULE?/a> SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE⑩ SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE??SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| SSM5H16TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| 10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
1000V 1A Ultra-Fast Discrete Diode in a SMB package
100V 1A Ultra-Fast Discrete Diode in a SMB package
200V 1A Ultra-Fast Discrete Diode in a SMB package
400V 1A Ultra-Fast Discrete Diode in a SMB package
600V 1A Ultra-Fast Discrete Diode in a SMB package
800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors
International Rectifier, Corp.
IRF[International Rectifier]
|
| 2SJ226 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0503-0 00; No. of Positions: 8; Connector Type: Wire
Very High-Speed Switching Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SJ208 2SJ208-T2 2SJ208-T1 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0502-8 00; No. of Positions: 6; Connector Type: Wire
P-CHANNEL MOS FET FOR SWITCHING
|
NEC Corp.
NEC[NEC]
|
| 18TQ045 18TQ045S 18TQ035S 18TQ 18TQ035 18TQ040 18T |
45V 18A Schottky Discrete Diode in a TO-220AC package
45V 18A Schottky Discrete Diode in a D2-Pak package
40V 18A Schottky Discrete Diode in a D2-Pak package
35V 18A Schottky Discrete Diode in a D2-Pak package
35V 18A Schottky Discrete Diode in a TO-220AC package
SCHOTTKY RECTIFIER
CAT6 SOL PC PVC YEL 2OFT PVC SOLID PATCH CORD
CAT6 SOL PC PVC YEL 30FT PVC SOLID PATCH CORD
DIODE 18 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB, PLASTIC, SMD-220, D2PAK-3, Rectifier Diode
40V 18A Schottky Discrete Diode in a TO-220AC package
|
IRF[International Rectifier]
Vishay Semiconductors
|
